frequ e ncy multipliers - ac ti v e - c hip 2 2 - 1 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com hmc814 gaas mmic x2 active frequency multiplier, 13 - 24.6 ghz output v00.1109 general description features functional diagram electrical specifcations, t a = +25 c, vdd1, vdd2 = +5v, +4 dbm drive level typical applications the hm c 814 is ideal for: ? c lock generation applications: so n et o c -192 & sdh stm-64 ? point-to-point & v sat radios ? test instrumentation ? military & space ? sensors the hm c 814 is a x2 active broadband frequency multiplier chip utilizing gaas phemt technology. when driven by a +4 dbm signal, the multiplier provides +17 dbm typical output power from 13 to 24.6 ghz. the fo, 3fo and 4fo isolations are >20 dbc at 19 ghz. the hm c 814 is ideal for use in lo multiplier chains for pt-to-pt & v sat radios yielding reduced parts count vs. traditional approaches. the low additive ssb phase n oise of -136 dbc/hz at 100 khz offset helps maintain good system noise performance. all data is taken with the chip connected via two 0.025mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils). high output power: +17 dbm low input power drive: 0 to +6 dbm fo isolation: >20 dbc @ fout = 19 ghz 100 khz ssb phase n oise: -136 dbc/hz single supply: +5 v @ 88ma die size: 1.2 x 1.23 x 0.1 mm parameter min. typ. max. units frequency range, input 6.5 - 12.3 ghz frequency range, output 13.0 - 24.6 ghz output power 14 17 dbm fo isolation (with respect to output level) 25 dbc 3fo isolation (with respect to output level) 25 dbc input return loss 7 db output return loss 7 db ssb phase n oise (100 khz offset @ input frequency = 19 ghz) -136 dbc/hz supply c urrent (idd1 & idd2) 70 88 100 ma
frequ e ncy multipliers - ac ti v e - c hip 2 2 - 2 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com output power vs. temperature @ +4 dbm drive level output power vs. supply voltage @ +4 dbm drive level output power vs. drive level output power vs. input power isolation @ +4 dbm drive level hmc814 v00.1109 gaas mmic x2 active frequency multiplier, 13 - 24.6 ghz output 0 4 8 12 16 20 12.5 14.5 16.5 18.5 20.5 22.5 24.5 26.5 +25c +85c -55c output power (dbm) frequency (ghz) -25 -15 -5 5 15 25 12.5 14.5 16.5 18.5 20.5 22.5 24.5 26.5 0 dbm 1 dbm 2 dbm 3 dbm 4 dbm 5 dbm 6 dbm output power (dbm) frequency (ghz) 0 4 8 12 16 20 12.5 14.5 16.5 18.5 20.5 22.5 24.5 26.5 4.5v 5.0v 5.5v output power (dbm) frequency (ghz) -30 -20 -10 0 10 20 12.5 14.5 16.5 18.5 20.5 22.5 24.5 26.5 fo 2 fo 3 fo 4 fo output power (dbm) frequency (ghz) 0 5 10 15 20 0 1 2 3 4 5 6 7 8 9 10 15 ghz 19 ghz 23 ghz 24 ghz output power (dbm) input power (dbm)
frequ e ncy multipliers - ac ti v e - c hip 2 2 - 3 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com input return loss vs. temperature output return loss vs. temperature phase noise @ 19 ghz hmc814 v00.1109 gaas mmic x2 active frequency multiplier, 13 - 24.6 ghz output -30 -25 -20 -15 -10 -5 0 6 7 8 9 10 11 12 13 +25c +85c -55c return loss (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 12.5 14.5 16.5 18.5 20.5 22.5 24.5 26.5 +25c +85c -55c return loss (db) frequency (ghz) absolute maximum ratings rf input ( v dd = +5 v ) +10 dbm supply v oltage ( v dd1, v dd2) +5.5 v dc c hannel temperature 175 c c ontinuous pdiss (t= 85 c ) (derate 8.7 mw/ c above 85 c ) 782 mw thermal resistance (channel to die bottom) 115 c /w storage temperature -65 to +150 c operating temperature -55 to +85 c typical supply current vs. vdd v dd ( v dc) idd (ma) 4.5 87 5.0 88 5.5 89 n ote: multiplier will operate over full voltage range shown above. ele c trostati c se n siti v e de v i c e obser v e ha n dli n g pre c autio n s -170 -150 -130 -110 -90 -70 -50 -30 -10 10 2 10 3 10 4 10 5 10 6 10 7 10 8 phase noise (dbc/hz) frequency (hz)
frequ e ncy multipliers - ac ti v e - c hip 2 2 - 4 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com outline drawing hmc814 v00.1109 gaas mmic x2 active frequency multiplier, 13 - 24.6 ghz output n otes: 1. all dime n sio n s are i n i nc hes [mm] 2. die thi c k n ess is .004 3. t y pi c al bo n d pad is .004 square 4. bo n d pad metalizatio n : gold 5. ba c kside metalizatio n : gold 6. ba c kside metal is grou n d 7. n o c o nn e c tio n required for u n labeled bo n d pads 8. o v erall die size .002
frequ e ncy multipliers - ac ti v e - c hip 2 2 - 5 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com hmc814 v00.1109 gaas mmic x2 active frequency multiplier, 13 - 24.6 ghz output pin n umber function description interface schematic 1 rfi n pin is a c coupled and matched to 50 ohms. 2, 3 v dd1, v dd2 supply voltage 5 v 0.5 v . external bypass capacitors of 100 pf, 1,000 pf and 2.2 f are recommended. 4 rfout pin is a c coupled and matched to 50 ohms. pin description assembly diagram
frequ e ncy multipliers - ac ti v e - c hip 2 2 - 6 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com hmc814 v00.1109 gaas mmic x2 active frequency multiplier, 13 - 24.6 ghz output mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hm c general handling, mounting, bonding n ote). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin flm substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin flm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should be brought as close to the die as possible in order to minimize ribbon bond length. typical die-to-substrate spacing is 0.076mm (3 mils). gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12 mils) is recommended to minimize inductance on rf, lo & if ports. an rf bypass capacitor should be used on the v dd input. a 100 pf single layer capacitor (mounted eutectically or by conductive epoxy) placed no further than 0.762mm (30 mils) from the chip is recommended. handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle or gel based esd protective containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do n ot attempt to clean the chip using liquid cleaning systems. storage: all bare die are placed in either waffle or gel based esd protective containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. static sensitivity: follow esd precautions to protect against > 250 v esd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fngers. mounting the chip is back-metallized and can be die mounted with ausn eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and fat. eutectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. c and a tool temperature of 265 deg. c . when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. c . do n ot expose the chip to a temperature greater than 320 deg. c for more than 20 seconds. n o more than 3 seconds of scrubbing should be required for attachment. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fllet is observed around the perimeter of the chip once it is placed into position. c ure epoxy per the manufacturers schedule. wire bonding ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. thermosonic wirebonding with a nominal stage temperature of 150 deg. c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. use the minimum level of ultrasonic energy to achieve reliable wirebonds. wirebonds should be started on the chip and terminated on the package or substrate. all bonds should be as short as possible <0.31mm (12 mils). 0.102mm (0.004) thick gaas mmic wire 3 mil ribbon bond rf ground plane 0.127mm (0.005) thick alumina thin film substrate 0.076mm (0.003) figure 1. 0.102mm (0.004) thick gaas mmic ribbon bond rf ground plane 0.254mm (0.010) thick alumina thin film substrate 0.076mm (0.003) figure 2. 0.150mm (0.005) thick moly tab
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